PartNumber | IRF640PBF | IRF640SPBF | IRF640STRL |
Description | MOSFET N-CH 200V HEXFET MOSFET | MOSFET N-Chan 200V 18 Amp | MOSFET RECOMMENDED ALT 844-IRF640STRLPBF |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | E | N |
Technology | Si | Si | Si |
Mounting Style | Through Hole | SMD/SMT | SMD/SMT |
Package / Case | TO-220AB-3 | TO-263-3 | TO-263-3 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 200 V | 200 V | - |
Id Continuous Drain Current | 3.3 A | 18 A | - |
Rds On Drain Source Resistance | 1.5 Ohms | 180 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 2 V | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |
Qg Gate Charge | 8.2 nC | 70 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 36 W | 130 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | Tube | Reel |
Height | 15.49 mm | - | 4.83 mm |
Length | 10.41 mm | - | 10.67 mm |
Series | IRF | IRF | IRF |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 4.7 mm | - | 9.65 mm |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 0.8 S | 6.7 S | - |
Fall Time | 8.9 ns | 36 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 17 ns | 51 ns | - |
Factory Pack Quantity | 50 | 1000 | 800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 14 ns | 45 ns | - |
Typical Turn On Delay Time | 8.2 ns | 14 ns | - |
Unit Weight | 0.211644 oz | 0.050717 oz | 0.050717 oz |