IRF6611

IRF6611 vs IRF6611TR1 vs IRF6611TR1PBF

 
PartNumberIRF6611IRF6611TR1IRF6611TR1PBF
DescriptionMOSFET 30V 1 N-CH HEXFET DIRECTFET MXMOSFET 30V 1 N-CH HEXFET DIRECTFET MXMOSFET N-CH 30V 32A DIRECTFET
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSNN-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDirectFET-MXDirectFET-MX-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current27 A27 A-
Rds On Drain Source Resistance2.6 mOhms2.6 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation3.9 W3.9 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height0.7 mm0.7 mm-
Length6.35 mm6.35 mm-
Transistor Type1 N-Channel1 N-Channel-
TypeDirectFET Power MOSFETDirectFET Power MOSFET-
Width5.05 mm5.05 mm-
BrandInfineon / IRInfineon / IR-
Fall Time6.5 ns6.5 ns-
Moisture SensitiveYesYes-
Product TypeMOSFETMOSFET-
Rise Time57 ns57 ns-
Factory Pack Quantity48001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time24 ns24 ns-
Typical Turn On Delay Time18 ns18 ns-
Part # Aliases-SP001526886-
Unit Weight-0.017637 oz-
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF6611 MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
IRF6611TR1 MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
IRF6611TRPBF MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
Infineon Technologies
Infineon Technologies
IRF6611 MOSFET N-CH 30V 32A DIRECTFET
IRF6611TR1 MOSFET N-CH 30V 32A DIRECTFET
IRF6611TR1PBF MOSFET N-CH 30V 32A DIRECTFET
IRF6611TRPBF MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
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