PartNumber | IRF6710S2TRPBF | IRF6710S2TR1PBF | IRF6711STRPBF |
Description | MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC | MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC | MOSFET 25V 1 N-CH HEXFET 3.8mOhms 13nC |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | DirectFET-S1 | DirectFET-S1 | DirectFET-SQ |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 25 V | 25 V | 25 V |
Id Continuous Drain Current | 37 A | 37 A | 84 A |
Rds On Drain Source Resistance | 5.9 mOhms | 11.9 mOhms | 5.2 mOhms |
Vgs th Gate Source Threshold Voltage | 1.8 V | 2.4 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 8.8 nC | 8.8 nC | 13 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 15 W | 15 W | 42 W |
Configuration | Single | Single | Single |
Packaging | Reel | Reel | Reel |
Height | 0.74 mm | 0.74 mm | 0.7 mm |
Length | 4.85 mm | 4.85 mm | 4.85 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 3.95 mm | 3.95 mm | 3.95 mm |
Brand | Infineon / IR | Infineon / IR | Infineon / IR |
Forward Transconductance Min | 21 S | 21 S | - |
Fall Time | 6 ns | 6 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 20 ns | 20 ns | - |
Factory Pack Quantity | 4800 | 1000 | 4800 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 5.2 ns | 5.2 ns | - |
Typical Turn On Delay Time | 7.9 ns | 7.9 ns | - |
Part # Aliases | SP001524736 | SP001530274 | SP001529154 |
Channel Mode | - | Enhancement | - |
Type | - | DirectFET Power MOSFET | - |
Unit Weight | - | 0.003527 oz | - |
Moisture Sensitive | - | - | Yes |