IRF6710S2TR1PBF

Mfr. #:: IRF6710S2TR1PBF
Manufacturer:: Infineon / IR
Description:: MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC
Lifecycle:: New from this manufacturer.
Datasheet:: IRF6710S2TR1PBF Datasheet
Delivery:: DHL FedEx Ups TNT EMS
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HTML Datasheet:: IRF6710S2TR1PBF Datasheet IRF6710S2TR1PBF Datasheet (P4-P6)IRF6710S2TR1PBF Datasheet (P7-P9)IRF6710S2TR1PBF Datasheet (P10)
ECAD Model:

Product Attribute
Attribute Value

Manufacturer:: Infineon

Product Category:: MOSFET

RoHS:: Y

Technology:: Si

Mounting Style:: SMD/SMT

Package / Case:: DirectFET-S1

Number of Channels:: 1 Channel

Transistor Polarity:: N-Channel

Vds - Drain-Source Breakdown Voltage:: 25 V

Id - Continuous Drain Current:: 37 A

Rds On - Drain-Source Resistance:: 11.9 mOhms

Vgs th - Gate-Source Threshold Voltage:: 2.4 V

Vgs - Gate-Source Voltage:: 20 V

Qg - Gate Charge:: 8.8 nC

Minimum Operating Temperature:: - 55 C

Maximum Operating Temperature:: + 175 C

Pd - Power Dissipation:: 15 W

Configuration:: Single

Channel Mode:: Enhancement

Packaging:: Reel

Height:: 0.74 mm

Length:: 4.85 mm

Transistor Type:: 1 N-Channel

Type:: DirectFET Power MOSFET

Width:: 3.95 mm

Brand:: Infineon / IR

Forward Transconductance - Min:: 21 S

Fall Time:: 6 ns

Product Type:: MOSFET

Rise Time:: 20 ns

Factory Pack Quantity:: 1000

Subcategory:: MOSFETs

Typical Turn-Off Delay Time:: 5.2 ns

Typical Turn-On Delay Time:: 7.9 ns

Part # Aliases:: SP001530274

Unit Weight:: 0.003527 oz

Tags: IRF6710, IRF671, IRF67, IRF6, IRF

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: info@omo-ic.com

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6710S2TR1PBF Description

***ied Electronics & Automation: MOSFET, N-Ch, VDSS 25V, RDS(ON) 9 mOhm, ID 12A, DirectFET

***ernational Rectifier: A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET S1 package rated at 12 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***ment14 APAC: MOSFET, N-CH, 25V; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:25V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:1.8W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:DirectFET; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DirectFET; Current Id Max:12A; Package / Case:S1; Power Dissipation Pd:1.8W; Pulse Current Idm:100A; Termination Type:Through Hole; Voltage Vds Typ:25V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.4V; Voltage Vgs th Min:1.4V

Market price

Part #	Mfg.	Description	Stock	Price
IRF6710S2TR1PBF DISTI # IRF6710S2TR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 25V 12A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6710S2TR1PBF DISTI # IRF6710S2TR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 25V 12A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6710S2TR1PBF DISTI # IRF6710S2TR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 25V 12A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6710S2TR1PBF DISTI # 70018854	Infineon Technologies AG	MOSFET,N-Ch,VDSS 25V,RDS(ON) 9 mOhm,ID 12A,DirectFET RoHS: Compliant	0	1000:$1.3500 2000:$1.2200 3000:$1.1200
IRF6710S2TR1PBF DISTI # 942-IRF6710S2TR1PBF	Infineon Technologies AG	MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC RoHS: Compliant	0
IRF6710S2TR1PBF	International Rectifier		788

Related products

Image	Part #	Description
	Mfr.#: IRF6710S2TRPBF OMO.#: OMO-IRF6710S2TRPBF	MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC
	Mfr.#: IRF6710S2TR1PBF OMO.#: OMO-IRF6710S2TR1PBF	MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC
	Mfr.#: IRF6710S2PBF OMO.#: OMO-IRF6710S2PBF-1190	New and Original
	Mfr.#: IRF6710S2TR1PBF OMO.#: OMO-IRF6710S2TR1PBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 12A DIRECTFET
	Mfr.#: IRF6710S2TRPBF OMO.#: OMO-IRF6710S2TRPBF-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 12A DIRECTFET

Availability

Stock:: Available
On Order:: 1000
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Current price of IRF6710S2TR1PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team sales@omo-ic.com

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IRF6710S2TR1PBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes