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IRF6710S2TR1PBF

P1-P3P4-P6P7-P9P10-P10
IRF6710S2TR/TR1PbF
4 www.irf.com
Fig 5. Typical Output Characteristics
Fig 4. Typical Output Characteristics
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
-60 -40 -20 0 20 40 60 80 100120140160180
T
J
, Junction Temperature (°C)
0.5
1.0
1.5
2.0
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 12A
V
GS
= 10V
VGS = 4.5V
1 10 100
V
DS
, Drain-to-Source Voltage (V)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM 2.5V
≤60µs PULSE WIDTH
Tj = 25°C
2.5V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM 2.5V
≤
60µs PULSE WIDTH
Tj = 175°C
2.5V
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
GS
, Gate-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 175°C
T
J
= 25°C
T
J
= -40°C
V
DS
= 15V
≤60µs PULSE WIDTH
0 20 40 60 80 100
I
D
, Drain Current (A)
0
5
10
15
20
25
30
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
Ω
)
T
J
= 25°C Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
IRF6710S2TR/TR1PbF
www.irf.com 5
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 11. Maximum Safe Operating Area
Fig 15. Maximum Avalanche Energy vs. Drain Current
Fig 14. Typ. Forward Transconductance vs. Drain Current
25 50 75 100 125 150 175
T
C
, Case Temperature (°C)
0
10
20
30
40
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-75 -50 -25 0 25 50 75 100 125 150 175
T
J
, Temperature ( °C )
1.0
1.5
2.0
2.5
3.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 1.0A
I
D
= 1.0mA
I
D
= 250µA
I
D
= 25µA
0.2 0.4 0.6 0.8 1.0 1.2
V
SD
, Source-to-Drain Voltage (V)
0.1
1
10
100
1000
I
SD
, Reverse Drain Current (A)
V
GS
= 0V
T
J
= 175°C
T
J
= 25°C
T
J
= -40°C
0.0 0.1 1.0 10.0 100.0
V
DS
, Drain-toSource Voltage (V)
0.01
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
T
A
= 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R
DS
(on)
100µsec
DC
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
20
40
60
80
100
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
1.8A
3.8A
BOTTOM
10A
0 20 40 60 80 100 120 140
I
D,
Drain-to-Source Current (A)
0
100
200
300
400
500
600
700
Gfs, Forward Transconductance (S)
T
J
= 25°C
T
J
= 175°C
V
DS
= 10V
380µs PULSE WIDTH
IRF6710S2TR/TR1PbF
6 www.irf.com
Fig 16. Typical Avalanche Current Vs.Pulsewidth
Fig 17. Maximum Avalanche Energy
vs. Temperature
Notes on Repetitive Avalanche Curves , Figures 16, 17:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 19a, 19b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 16, 17).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) = DT/ Z
thJC
I
av
=
2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
0.01
0.1
1
10
100
A
v
a
l
a
n
c
h
e
C
u
r
r
e
n
t
(
A
)
0.05
Duty Cycle = Single Pulse
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆Τ
j = 25°C and
Tstart = 150°C.
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
∆
Tj = 150°C and
Tstart =25°C (Single Pulse)
25 50 75 100 125 150 175
Starting T
J
, Junction Temperature (°C)
0
10
20
30
E
A
R
,
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
TOP Single Pulse
BOTTOM 1% Duty Cycle
I
D
= 10A
P1-P3P4-P6P7-P9P10-P10

IRF6710S2TR1PBF

Mfr. #:
Buy IRF6710S2TR1PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC
Lifecycle:
New from this manufacturer.
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