IRF6711

IRF6711STRPBF vs IRF6711STR1PBF vs IRF6711STR1PBF.

 
PartNumberIRF6711STRPBFIRF6711STR1PBFIRF6711STR1PBF.
DescriptionMOSFET 25V 1 N-CH HEXFET 3.8mOhms 13nCMOSFET N-CH 25V 19A DIRECTFET-SQ
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseDirectFET-SQ--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current84 A--
Rds On Drain Source Resistance5.2 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge13 nC--
Pd Power Dissipation42 W--
ConfigurationSingle--
PackagingReel--
Height0.7 mm--
Length4.85 mm--
Transistor Type1 N-Channel--
Width3.95 mm--
BrandInfineon / IR--
Moisture SensitiveYes--
Product TypeMOSFET--
Factory Pack Quantity4800--
SubcategoryMOSFETs--
Part # AliasesSP001529154--
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF6711STRPBF MOSFET 25V 1 N-CH HEXFET 3.8mOhms 13nC
Infineon Technologies
Infineon Technologies
IRF6711STR1PBF MOSFET N-CH 25V 19A DIRECTFET-SQ
IRF6711STRPBF RF Bipolar Transistors MOSFET 25V 1 N-CH HEXFET 3.8mOhms 13nC
IRF6711STR1PBF. New and Original
IRF6711STRPBF. New and Original
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