 | | |
| PartNumber | IRF6715MTRPBF | IRF6715MTR1PBF |
| Description | MOSFET 25V 1 N-CH HEXFET 1.6mOhms 40nC | MOSFET 25V 1 N-CH HEXFET 1.6mOhms 40nC |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | DirectFET-MX | DirectFET-MX |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 25 V | 25 V |
| Id Continuous Drain Current | 180 A | 180 A |
| Rds On Drain Source Resistance | 2.1 mOhms | 2.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.9 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 40 nC | 40 nC |
| Minimum Operating Temperature | - 40 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 78 W | 78 W |
| Configuration | Single | Single |
| Tradename | DirectFET | - |
| Packaging | Reel | Reel |
| Height | 0.7 mm | 0.7 mm |
| Length | 6.35 mm | 6.35 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 5.05 mm | 5.05 mm |
| Brand | Infineon / IR | Infineon / IR |
| Forward Transconductance Min | 135 S | - |
| Fall Time | 12 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 31 ns | - |
| Factory Pack Quantity | 4800 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 16 ns | - |
| Typical Turn On Delay Time | 20 ns | - |
| Part # Aliases | SP001531626 | SP001530866 |
| Moisture Sensitive | - | Yes |
| Unit Weight | - | 0.017637 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
IRF6715MTRPBF | MOSFET 25V 1 N-CH HEXFET 1.6mOhms 40nC | |
| IRF6715MTR1PBF | MOSFET 25V 1 N-CH HEXFET 1.6mOhms 40nC | ||
Infineon Technologies |
IRF6715MTRPBF | Trans MOSFET N-CH Si 25V 34A 7-Pin Direct-FET MX T/R | |
| IRF6715MTR1PBF | MOSFET N-CH 25V 34A DIRECTFET |