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| PartNumber | IRF6724MTRPBF | IRF6724MTR1PBF |
| Description | MOSFET 30V 1 N-CH HEXFET 2.5mOhms 33nC | MOSFET 30V 1 N-CH HEXFET 2.5mOhms 33nC |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | DirectFET-MX | DirectFET-MX |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 150 A | 150 A |
| Rds On Drain Source Resistance | 2.7 mOhms | 3.5 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 33 nC | 33 nC |
| Pd Power Dissipation | 89 W | 89 W |
| Configuration | Single | Single |
| Packaging | Reel | Reel |
| Height | 0.7 mm | 0.7 mm |
| Length | 6.35 mm | 6.35 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 5.05 mm | 5.05 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Moisture Sensitive | Yes | Yes |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 4800 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SP001529188 | SP001526974 |
| Vgs th Gate Source Threshold Voltage | - | 2.35 V |
| Minimum Operating Temperature | - | - 40 C |
| Maximum Operating Temperature | - | + 150 C |
| Channel Mode | - | Enhancement |
| Type | - | DirectFET Power MOSFET |
| Forward Transconductance Min | - | 130 S |
| Fall Time | - | 16 ns |
| Rise Time | - | 19 ns |
| Typical Turn Off Delay Time | - | 23 ns |
| Typical Turn On Delay Time | - | 11 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF6724MTRPBF | MOSFET 30V 1 N-CH HEXFET 2.5mOhms 33nC | |
| IRF6724MTR1PBF | MOSFET N-CH 30V 27A DIRECTFET | ||
| IRF6724MTRPBF | MOSFET 30V 1 N-CH HEXFET 2.5mOhms 33nC | ||
Infineon / IR |
IRF6724MTR1PBF | MOSFET 30V 1 N-CH HEXFET 2.5mOhms 33nC | |
| IRF6724MTR1PBF. | New and Original | ||
| IRF6724M | New and Original |