IRF6795

IRF6795MTRPBF vs IRF6795MTR1PBF vs IRF6795MTR1PBF.

 
PartNumberIRF6795MTRPBFIRF6795MTR1PBFIRF6795MTR1PBF.
DescriptionMOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nCMOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDirectFET-MXDirectFET-MX-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage25 V25 V-
Id Continuous Drain Current160 A160 A-
Rds On Drain Source Resistance2.4 mOhms3.2 mOhms-
Vgs th Gate Source Threshold Voltage1.8 V2.35 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge35 nC35 nC-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.8 W75 W-
ConfigurationSingleSingle-
TradenameDirectFET--
PackagingReelReel-
Height0.7 mm0.7 mm-
Length6.35 mm6.35 mm-
Transistor Type1 N-Channel1 N-Channel-
Width5.05 mm5.05 mm-
BrandInfineon / IRInfineon / IR-
Forward Transconductance Min100 S100 S-
Fall Time11 ns11 ns-
Moisture SensitiveYesYes-
Product TypeMOSFETMOSFET-
Rise Time27 ns27 ns-
Factory Pack Quantity48001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time16 ns16 ns-
Typical Turn On Delay Time16 ns16 ns-
Part # AliasesSP001529342SP001524708-
Channel Mode-Enhancement-
Type-DirectFET Power MOSFET-
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF6795MTRPBF MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC
IRF6795MTR1PBF MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC
IRF6795MTRPBF. New and Original
IRF6795MTR1PBF. New and Original
Infineon Technologies
Infineon Technologies
IRF6795MTRPBF MOSFET N-CH 25V 32A DIRECTFET-MX
IRF6795MTR1PBF IGBT Transistors MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC
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