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| PartNumber | IRF7105TRPBF | IRF7105PBF | IRF7105QTRPBF |
| Description | MOSFET MOSFT DUAL N/PCh 25V 3.5A | MOSFET N/P-CH 25V 8-SOIC | MOSFET N/P-CH 25V 8-SOIC |
| Manufacturer | Infineon | Infineon Technologies | Infineon Technologies |
| Product Category | MOSFET | IC Chips | FETs - Arrays |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel, P-Channel | N-Channel P-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 3.5 A | - | - |
| Rds On Drain Source Resistance | 160 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 9.4 nC | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | Dual Dual Drain | - |
| Packaging | Reel | Tube Alternate Packaging | Digi-ReelR |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | 1 N-Channel 1 P-Channel | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 4000 | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | SP001577206 | - | - |
| Unit Weight | 0.019048 oz | 0.019048 oz | - |
| Series | - | HEXFETR | HEXFETR |
| Package Case | - | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | - | Surface Mount | Surface Mount |
| Supplier Device Package | - | 8-SO | 8-SO |
| FET Type | - | N and P-Channel | N and P-Channel |
| Power Max | - | 2W | 2W |
| Drain to Source Voltage Vdss | - | 25V | 25V |
| Input Capacitance Ciss Vds | - | 330pF @ 15V | 330pF @ 15V |
| FET Feature | - | Standard | Standard |
| Current Continuous Drain Id 25°C | - | 3.5A, 2.3A | 3.5A, 2.3A |
| Rds On Max Id Vgs | - | 100 mOhm @ 1A, 10V | 100 mOhm @ 1A, 10V |
| Vgs th Max Id | - | 3V @ 250μA | 3V @ 250μA |
| Gate Charge Qg Vgs | - | 27nC @ 10V | 27nC @ 10V |
| Pd Power Dissipation | - | 2 W | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Fall Time | - | 25 ns 37 ns | - |
| Rise Time | - | 9 ns 13 ns | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 3.5 A | - |
| Vds Drain Source Breakdown Voltage | - | 25 V | - |
| Rds On Drain Source Resistance | - | 160 mOhms | - |
| Typical Turn Off Delay Time | - | 45 ns | - |
| Typical Turn On Delay Time | - | 7 ns 12 ns | - |
| Qg Gate Charge | - | 9.4 nC | - |
| Channel Mode | - | Enhancement | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IRF7105TRPBF | MOSFET MOSFT DUAL N/PCh 25V 3.5A | |
| IRF7105PBF | MOSFET N/P-CH 25V 8-SOIC | ||
| IRF7105QTRPBF | MOSFET N/P-CH 25V 8-SOIC | ||
| IRF7105TRPBF | MOSFET N/P-CH 25V 8-SOIC | ||
| IRF7105TRPBF. | Transistor Polarity:N and P Channel, Continuous Drain Current Id:3.5A, Drain Source Voltage Vds:25V, On Resistance Rds(on):0.083ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power | ||
| IRF7105TRPBF-CUT TAPE | New and Original | ||
| IRF7105 | MOSFET Transistor, Pair, Complementary, SO | ||
| IRF7105PBF-1 | New and Original | ||
| IRF7105QPBF | 20V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE | ||
| IRF7105S | New and Original | ||
| IRF7105TR | 3.5 A, 25 V, 0.1 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MS-012AA | ||
| IRF7105TRPBF,F7105,IRF71 | New and Original | ||
| IRF7105TRPBFINFINEON | New and Original |