IRF7311T

IRF7311TRPBF vs IRF7311TRPBF-CUT TAPE vs IRF7311TR

 
PartNumberIRF7311TRPBFIRF7311TRPBF-CUT TAPEIRF7311TR
DescriptionMOSFET MOSFT DUAL NCh 20V 6.6AMOSFET 2N-CH 20V 6.6A 8-SOIC
ManufacturerInfineon-Infineon Technologies
Product CategoryMOSFET-FETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current6.6 A--
Rds On Drain Source Resistance30 mOhms--
Vgs th Gate Source Threshold Voltage700 mV--
Vgs Gate Source Voltage12 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2 W--
ConfigurationDual--
PackagingReel-Tape & Reel (TR)
Height1.75 mm--
Length4.9 mm--
Transistor Type2 N-Channel--
Width3.9 mm--
BrandInfineon / IR--
Forward Transconductance Min20 S--
Fall Time31 ns--
Product TypeMOSFET--
Rise Time17 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time38 ns--
Typical Turn On Delay Time8.1 ns--
Part # AliasesSP001574720--
Unit Weight0.017870 oz--
Series--HEXFETR
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SO
FET Type--2 N-Channel (Dual)
Power Max--2W
Drain to Source Voltage Vdss--20V
Input Capacitance Ciss Vds--900pF @ 15V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--6.6A
Rds On Max Id Vgs--29 mOhm @ 6A, 4.5V
Vgs th Max Id--700mV @ 250μA
Gate Charge Qg Vgs--27nC @ 4.5V
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRF7311TRPBF MOSFET MOSFT DUAL NCh 20V 6.6A
IRF7311TRPBF. New and Original
IRF7311TRPBF-CUT TAPE New and Original
Infineon Technologies
Infineon Technologies
IRF7311TR MOSFET 2N-CH 20V 6.6A 8-SOIC
IRF7311TRPBF MOSFET 2N-CH 20V 6.6A 8-SOIC
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