PartNumber | IRF7322D1PBF | IRF7321D2TRPBF | IRF7324D1PBF |
Description | MOSFET 20V FETKY 12 VGS 98 RDS 2.7VmOhm | MOSFET MOSFT PCh w/Schttky -4.9A 62mOhm 23nC | MOSFET 20V FETKY 12 VGS 270 RDS 2.7VmOhm |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SO-8 | SO-8 | SO-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 30 V | 20 V |
Id Continuous Drain Current | 5.3 A | 4.9 A | 2.2 A |
Rds On Drain Source Resistance | 62 mOhms | 98 mOhms | 270 mOhms |
Vgs th Gate Source Threshold Voltage | 700 mV | - | - |
Vgs Gate Source Voltage | 12 V | 20 V | 12 V |
Qg Gate Charge | 19 nC | 23 nC | 5.2 nC |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 2 W | 2 W | 2 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Packaging | Tube | Reel | Tube |
Height | 1.75 mm | 1.75 mm | 1.75 mm |
Length | 4.9 mm | 4.9 mm | 4.9 mm |
Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
Type | FETKY MOSFET & Schottky Diode | - | FETKY MOSFET & Schottky Diode |
Width | 3.9 mm | 3.9 mm | 3.9 mm |
Brand | Infineon / IR | Infineon / IR | Infineon / IR |
Forward Transconductance Min | 5.9 S | - | - |
Fall Time | 49 ns | - | 7.6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 40 ns | - | 12 ns |
Factory Pack Quantity | 95 | 4000 | 95 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 42 ns | - | 11 ns |
Typical Turn On Delay Time | 15 ns | - | 10 ns |
Part # Aliases | SP001572002 | SP001554194 | - |
Unit Weight | 0.019048 oz | 0.019048 oz | 0.019048 oz |