IRF7402

IRF7402TRPBF vs IRF7402TR vs IRF7402PBF

 
PartNumberIRF7402TRPBFIRF7402TRIRF7402PBF
DescriptionMOSFET MOSFT 20V 6.8A 35mOhm 14nCMOSFET N-CH 20V 6.8A 8-SOICIGBT Transistors MOSFET 20V 1 N-CH HEXFET 35mOhms 14nC
ManufacturerInfineonIRIR
Product CategoryMOSFETFETs - SingleFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSO-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current6.8 A--
Rds On Drain Source Resistance35 mOhms--
Vgs th Gate Source Threshold Voltage700 mV--
Vgs Gate Source Voltage12 V--
Qg Gate Charge14 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation2.5 W--
ConfigurationSingle-Single Quad Drain Triple Source
PackagingReel-Tube
Height1.75 mm--
Length4.9 mm--
Transistor Type1 N-Channel-1 N-Channel
Width3.9 mm--
BrandInfineon Technologies--
Forward Transconductance Min6.1 S--
Fall Time32 ns-32 ns
Product TypeMOSFET--
Rise Time47 ns-47 ns
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time24 ns-24 ns
Typical Turn On Delay Time5.1 ns-5.1 ns
Part # AliasesSP001577384--
Unit Weight0.017870 oz-0.019048 oz
Package Case--SOIC-8
Pd Power Dissipation--2.5 W
Vgs Gate Source Voltage--12 V
Id Continuous Drain Current--6.8 A
Vds Drain Source Breakdown Voltage--20 V
Vgs th Gate Source Threshold Voltage--0.7 V
Rds On Drain Source Resistance--35 mOhms
Qg Gate Charge--14 nC
Forward Transconductance Min--6.1 S
Channel Mode--Enhancement
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRF7402TRPBF MOSFET MOSFT 20V 6.8A 35mOhm 14nC
IRF7402TR MOSFET N-CH 20V 6.8A 8-SOIC
IRF7402TRPBF MOSFET N-CH 20V 6.8A 8-SOIC
IRF7402PBF IGBT Transistors MOSFET 20V 1 N-CH HEXFET 35mOhms 14nC
IRF7402 MOSFET, N-CH, 20V, 6.8A, SOIC
IRF7402TRPBF SOP8 New and Original
IRF7402TRPBF. New and Original
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