PartNumber | IRF7752 | IRF7752TR | IRF7752TRPBF |
Description | MOSFET 2N-CH 30V 4.6A 8-TSSOP | MOSFET 2N-CH 30V 4.6A 8-TSSOP | IGBT Transistors MOSFET MOSFT DUAL NCh 30V 4.6A |
Manufacturer | - | - | Infineon Technologies |
Product Category | - | - | FETs - Arrays |
Series | - | - | HEXFETR |
Packaging | - | - | Digi-ReelR |
Unit Weight | - | - | 0.005573 oz |
Mounting Style | - | - | SMD/SMT |
Package Case | - | - | 8-TSSOP (0.173", 4.40mm Width) |
Technology | - | - | Si |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Number of Channels | - | - | 2 Channel |
Supplier Device Package | - | - | 8-TSSOP |
Configuration | - | - | Dual |
FET Type | - | - | 2 N-Channel (Dual) |
Power Max | - | - | 1W |
Transistor Type | - | - | 2 N-Channel |
Drain to Source Voltage Vdss | - | - | 30V |
Input Capacitance Ciss Vds | - | - | 861pF @ 25V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 4.6A |
Rds On Max Id Vgs | - | - | 30 mOhm @ 4.6A, 10V |
Vgs th Max Id | - | - | 2V @ 250μA |
Gate Charge Qg Vgs | - | - | 9nC @ 4.5V |
Pd Power Dissipation | - | - | 1 W |
Vgs Gate Source Voltage | - | - | 12 V |
Id Continuous Drain Current | - | - | 4.6 A |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Rds On Drain Source Resistance | - | - | 36 mOhms |
Transistor Polarity | - | - | N-Channel |
Qg Gate Charge | - | - | 9 nC |