PartNumber | IRF7759L2TRPBF | IRF7759L2TR1PBF |
Description | MOSFET 75V 1 N-CH HEXFET 2.3mOhms 200nC | MOSFET 75V 160A 2.3mOhm 220nC Qg |
Manufacturer | Infineon | Infineon |
Product Category | MOSFET | MOSFET |
RoHS | Y | Y |
Technology | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT |
Package / Case | DirectFET-L8 | DirectFET-L8 |
Number of Channels | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 75 V | 75 V |
Id Continuous Drain Current | 160 A | 160 A |
Rds On Drain Source Resistance | 1.8 mOhms | 1.8 mOhms |
Vgs Gate Source Voltage | 20 V | 20 V |
Qg Gate Charge | 200 nC | 200 nC |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C |
Pd Power Dissipation | 125 W | 125 W |
Configuration | Single | Single |
Channel Mode | Enhancement | - |
Tradename | DirectFET | - |
Packaging | Reel | Reel |
Height | 0.74 mm | 0.74 mm |
Length | 9.15 mm | 9.15 mm |
Transistor Type | 1 N-Channel | 1 N-Channel |
Width | 7.1 mm | 7.1 mm |
Brand | Infineon Technologies | Infineon / IR |
Fall Time | 33 ns | 33 ns |
Product Type | MOSFET | MOSFET |
Rise Time | 87 ns | 37 ns |
Factory Pack Quantity | 4000 | 1000 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 80 ns | - |
Typical Turn On Delay Time | 18 ns | - |
Part # Aliases | SP001563710 | SP001566426 |
Vgs th Gate Source Threshold Voltage | - | 4 V |
Forward Transconductance Min | - | 74 S |
Unit Weight | - | 0.035274 oz |