IRF961

IRF9610PBF vs IRF9610L vs IRF9610

 
PartNumberIRF9610PBFIRF9610LIRF9610
DescriptionMOSFET P-CH -200V HEXFET MOSFETMOSFET P-CH 200V 1.8A TO-262MOSFET P-CH 200V 1.8A TO-220AB
ManufacturerVishay-IR
Product CategoryMOSFET-FETs - Single
RoHSE--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage200 V--
Id Continuous Drain Current1.8 A--
Rds On Drain Source Resistance3 Ohms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge11 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation20 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height15.49 mm--
Length10.41 mm--
SeriesIRF--
Transistor Type1 P-Channel--
Width4.7 mm--
BrandVishay / Siliconix--
Forward Transconductance Min0.9 S--
Fall Time8 ns--
Product TypeMOSFET--
Rise Time15 ns--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Typical Turn Off Delay Time10 ns--
Typical Turn On Delay Time8 ns--
Unit Weight0.211644 oz--
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
IRF9610SPBF MOSFET P-CH -200V HEXFET MOSFET
IRF9610PBF MOSFET P-CH -200V HEXFET MOSFET
Vishay
Vishay
IRF9610SPBF MOSFET P-CH 200V 1.8A D2PAK
IRF9610L MOSFET P-CH 200V 1.8A TO-262
IRF9610STRL MOSFET P-CH 200V 1.8A D2PAK
IRF9610STRR MOSFET P-CH 200V 1.8A D2PAK
IRF9610 MOSFET P-CH 200V 1.8A TO-220AB
IRF9610PBF MOSFET P-CH 200V 1.8A TO-220AB
IRF9610S MOSFET P-CH 200V 1.8A D2PAK
IRF9610-TSTU New and Original
IRF9610N New and Original
IRF9612 New and Original
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