PartNumber | IRF9610PBF | IRF9610L | IRF9610 |
Description | MOSFET P-CH -200V HEXFET MOSFET | MOSFET P-CH 200V 1.8A TO-262 | MOSFET P-CH 200V 1.8A TO-220AB |
Manufacturer | Vishay | - | IR |
Product Category | MOSFET | - | FETs - Single |
RoHS | E | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | P-Channel | - | - |
Vds Drain Source Breakdown Voltage | 200 V | - | - |
Id Continuous Drain Current | 1.8 A | - | - |
Rds On Drain Source Resistance | 3 Ohms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 11 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 20 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Height | 15.49 mm | - | - |
Length | 10.41 mm | - | - |
Series | IRF | - | - |
Transistor Type | 1 P-Channel | - | - |
Width | 4.7 mm | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 0.9 S | - | - |
Fall Time | 8 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 15 ns | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 10 ns | - | - |
Typical Turn On Delay Time | 8 ns | - | - |
Unit Weight | 0.211644 oz | - | - |