IRF9Z34NS

IRF9Z34NSTRLPBF vs IRF9Z34NSPBF vs IRF9Z34NSTRR

 
PartNumberIRF9Z34NSTRLPBFIRF9Z34NSPBFIRF9Z34NSTRR
DescriptionMOSFET MOSFT PCh -55V 19A 100mOhm 23.3nCMOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nCMOSFET P-CH 55V 19A D2PAK
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseD2PAK-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage55 V55 V-
Id Continuous Drain Current19 A19 A-
Rds On Drain Source Resistance100 mOhms100 mOhms-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge23.3 nC23.3 nC-
Pd Power Dissipation68 W68 W-
ConfigurationSingleSingle-
PackagingReelTube-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 P-Channel1 P-Channel-
Width6.22 mm6.22 mm-
BrandInfineon TechnologiesInfineon Technologies-
Product TypeMOSFETMOSFET-
Factory Pack Quantity8001000-
SubcategoryMOSFETsMOSFETs-
Part # AliasesSP001554544SP001566500-
Unit Weight0.139332 oz0.139332 oz-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 175 C-
Channel Mode-Enhancement-
Type-HEXFET Power MOSFET-
Fall Time-41 ns-
Rise Time-55 ns-
Typical Turn Off Delay Time-30 ns-
Typical Turn On Delay Time-13 ns-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRF9Z34NSTRLPBF MOSFET MOSFT PCh -55V 19A 100mOhm 23.3nC
IRF9Z34NSTRR MOSFET P-CH 55V 19A D2PAK
IRF9Z34NSTRLPBF MOSFET P-CH 55V 19A D2PAK
IRF9Z34NSTRRPBF Darlington Transistors MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC
IRF9Z34NSPBF Darlington Transistors MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC
Infineon / IR
Infineon / IR
IRF9Z34NSTRRPBF MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC
Infineon Technologies
Infineon Technologies
IRF9Z34NSPBF MOSFET 1 P-CH -55V HEXFET 100mOhms 23.3nC
IRF9Z34NSTRLPBF-CUT TAPE New and Original
IRF9Z34NS MOSFET Transistor, P-Channel, TO-263AB
IRF9Z34NS,IRF9Z34NSTRRPB New and Original
IRF9Z34NSTRRPBF,F9Z34NS, New and Original
IRF9Z34NSTRRPBF,IRF9Z34N New and Original
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