PartNumber | IRFD110PBF | IRFD110 |
Description | MOSFET N-CH 100V HEXFET MOSFET HEXDI | MOSFET RECOMMENDED ALT 844-IRFD110PBF |
Manufacturer | Vishay | Vishay |
Product Category | MOSFET | MOSFET |
RoHS | E | N |
Technology | Si | Si |
Mounting Style | Through Hole | Through Hole |
Package / Case | HVMDIP-4 | HVMDIP-4 |
Number of Channels | 1 Channel | - |
Transistor Polarity | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | - |
Id Continuous Drain Current | 1 A | - |
Rds On Drain Source Resistance | 540 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | - |
Vgs Gate Source Voltage | 10 V | - |
Qg Gate Charge | 8.3 nC | - |
Minimum Operating Temperature | - 55 C | - |
Maximum Operating Temperature | + 175 C | - |
Pd Power Dissipation | 1.3 W | - |
Configuration | Single | - |
Channel Mode | Enhancement | - |
Packaging | Tube | Tube |
Height | 3.37 mm | - |
Length | 6.29 mm | - |
Series | IRFD | IRFD |
Transistor Type | 1 N-Channel | - |
Width | 5 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix |
Forward Transconductance Min | 0.8 S | - |
Fall Time | 9.4 ns | - |
Product Type | MOSFET | MOSFET |
Rise Time | 16 ns | - |
Factory Pack Quantity | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 15 ns | - |
Typical Turn On Delay Time | 6.9 ns | - |
Unit Weight | 0.010582 oz | - |