IRFD912

IRFD9120PBF vs IRFD9120 vs IRFD9123

 
PartNumberIRFD9120PBFIRFD9120IRFD9123
DescriptionMOSFET P-CH -100V HEXFET MOSFETMOSFET RECOMMENDED ALT 844-IRFD9120PBFMOSFET P-CH 100V 1A 4-DIP
ManufacturerVishayVishayIR
Product CategoryMOSFETMOSFETFETs - Single
RoHSEN-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseHVMDIP-4HVMDIP-4-
Number of Channels1 Channel-1 Channel
Transistor PolarityP-Channel-P-Channel
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current1 A--
Rds On Drain Source Resistance600 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation1.3 W--
ConfigurationSingle-Single
Channel ModeEnhancement--
PackagingTubeTubeTube
Height3.37 mm3.37 mm-
Length6.29 mm6.29 mm-
SeriesIRFDIRFD-
Transistor Type1 P-Channel-1 P-Channel
Width5 mm5 mm-
BrandVishay / SiliconixVishay / Siliconix-
Forward Transconductance Min0.71 S--
Fall Time25 ns--
Product TypeMOSFETMOSFET-
Rise Time29 ns--
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time21 ns--
Typical Turn On Delay Time9.6 ns--
Unit Weight--0.022575 oz
Package Case--DIP-4
Pd Power Dissipation--1.3 W
Id Continuous Drain Current--1 A
Vds Drain Source Breakdown Voltage--- 100 V
Vgs th Gate Source Threshold Voltage--4 V
Rds On Drain Source Resistance--600 mOhms
Qg Gate Charge--18 nC
Manufacturer Part # Description RFQ
Vishay / Siliconix
Vishay / Siliconix
IRFD9120PBF MOSFET P-CH -100V HEXFET MOSFET
IRFD9120 MOSFET RECOMMENDED ALT 844-IRFD9120PBF
Vishay
Vishay
IRFD9120 MOSFET P-CH 100V 1A 4-DIP
IRFD9120PBF MOSFET P-CH 100V 1A 4-DIP
IRFD9123 MOSFET P-CH 100V 1A 4-DIP
IRFD9123PBF MOSFET P-CH 100V 1A HEXDIP
IRFD9120(HSMRKD) New and Original
IRFD9120-HARRIS New and Original
IRFD9120-IRFD9120 New and Original
IRFD9120PBF-ND New and Original
IRFD9123-03 New and Original
IRFD9123-IRFD9123 New and Original
IRFD9123X New and Original
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