 | | |
| PartNumber | IRFH5007TRPBF | IRFH5007TR2PBF |
| Description | MOSFET 75V 1 N-CH HEXFET 5.9mOhms 65nC | MOSFET MOSFT 70V 100A 5.9mOhm 65nC Qg |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PQFN-8 | PQFN-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 75 V | 75 V |
| Id Continuous Drain Current | 17 A | 17 A |
| Rds On Drain Source Resistance | 5.9 mOhms | 5.9 mOhms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 65 nC | 65 nC |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 3.6 W | 3.6 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Reel |
| Height | 0.83 mm | 0.83 mm |
| Length | 6 mm | 6 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 5 mm | 5 mm |
| Brand | Infineon / IR | Infineon / IR |
| Forward Transconductance Min | 100 S | 100 S |
| Fall Time | 11 ns | 11 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 14 ns | 14 ns |
| Factory Pack Quantity | 4000 | 400 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 30 ns | - |
| Typical Turn On Delay Time | 10 ns | - |
| Part # Aliases | SP001564166 | SP001566652 |
| Unit Weight | - | 0.017637 oz |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
IRFH5007TRPBF | MOSFET 75V 1 N-CH HEXFET 5.9mOhms 65nC | |
| IRFH5007TR2PBF | MOSFET MOSFT 70V 100A 5.9mOhm 65nC Qg | ||
Infineon Technologies |
IRFH5007TRPBF | MOSFET N-CH 75V 17A 5X6 PQFN | |
| IRFH5007TR2PBF | MOSFET N-CH 75V 17A 5X6 PQFN | ||
| IRFH5007TRPBF-S | New and Original | ||
| IRFH5007TRPBF. | New and Original |