IRFH5010

IRFH5010TRPBF vs IRFH5010TR2PBF vs IRFH5010TRPBF.

 
PartNumberIRFH5010TRPBFIRFH5010TR2PBFIRFH5010TRPBF.
DescriptionMOSFET 100V 1 N-CH HEXFET 9mOhms 65nCMOSFET MOSFT 100V 100A 9.0mOhm 65nC QgMOSFET Transistor, FULL REEL
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePQFN-8PQFN-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current100 A13 A-
Rds On Drain Source Resistance9 mOhms9 mOhms-
Vgs th Gate Source Threshold Voltage4 V4 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge65 nC65 nC-
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation250 W3.6 W-
ConfigurationSingleSingle-
Channel ModeEnhancement--
PackagingReelReel-
Height0.83 mm0.83 mm-
Length6 mm6 mm-
Transistor Type1 N-Channel1 N-Channel-
TypeHEXFET Power MOSFET--
Width5 mm5 mm-
BrandInfineon / IRInfineon / IR-
Forward Transconductance Min206 S206 S-
Fall Time8.6 ns8.6 ns-
Product TypeMOSFETMOSFET-
Rise Time12 ns12 ns-
Factory Pack Quantity4000400-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time27 ns--
Typical Turn On Delay Time9 ns--
Part # AliasesSP001560282SP001570754-
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRFH5010TRPBF MOSFET 100V 1 N-CH HEXFET 9mOhms 65nC
IRFH5010TR2PBF MOSFET MOSFT 100V 100A 9.0mOhm 65nC Qg
IRFH5010TRPBF. MOSFET Transistor, FULL REEL
Infineon Technologies
Infineon Technologies
IRFH5010TR2PBF MOSFET N-CH 100V 13A 5X6 PQFN
IRFH5010TRPBF MOSFET N-CH 100V 13A 8-PQFN
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