PartNumber | IRFH8311TRPBF | IRFH8311TRPBF. | IRFH8311TR2PBF |
Description | MOSFET MOSFET, 30V, 50A, 2 33nC Qg, PQFN5x6 | ||
Manufacturer | Infineon | - | IRF |
Product Category | MOSFET | - | IC Chips |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | PQFN-8 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 80 A | - | - |
Rds On Drain Source Resistance | 2.1 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2.35 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 30 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 3.6 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Reel | - | - |
Height | 0.83 mm | - | - |
Length | 6 mm | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | HEXFET Power MOSFET | - | - |
Width | 5 mm | - | - |
Brand | Infineon / IR | - | - |
Forward Transconductance Min | 83 S | - | - |
Fall Time | 12 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 26 ns | - | - |
Factory Pack Quantity | 4000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 21 ns | - | - |
Typical Turn On Delay Time | 21 ns | - | - |
Part # Aliases | SP001564136 | - | - |