IRFH831

IRFH8311TRPBF vs IRFH8311TRPBF. vs IRFH8311TR2PBF

 
PartNumberIRFH8311TRPBFIRFH8311TRPBF.IRFH8311TR2PBF
DescriptionMOSFET MOSFET, 30V, 50A, 2 33nC Qg, PQFN5x6
ManufacturerInfineon-IRF
Product CategoryMOSFET-IC Chips
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CasePQFN-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current80 A--
Rds On Drain Source Resistance2.1 mOhms--
Vgs th Gate Source Threshold Voltage2.35 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge30 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.6 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height0.83 mm--
Length6 mm--
Transistor Type1 N-Channel--
TypeHEXFET Power MOSFET--
Width5 mm--
BrandInfineon / IR--
Forward Transconductance Min83 S--
Fall Time12 ns--
Product TypeMOSFET--
Rise Time26 ns--
Factory Pack Quantity4000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time21 ns--
Typical Turn On Delay Time21 ns--
Part # AliasesSP001564136--
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRFH8311TRPBF MOSFET MOSFET, 30V, 50A, 2 33nC Qg, PQFN5x6
IRFH8316TRPBF MOSFET MOSFET, 30V, 25A, 4 4.7nC Qg, PQFN5x6
IRFH8318TRPBF MOSFET 30V 1 N-CH HEXFET 3.1mOhms 41nC
IRFH8311TRPBF. New and Original
IRFH8311TR2PBF New and Original
IRFH8318TRPBF. Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.0025ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Dis
Infineon Technologies
Infineon Technologies
IRFH8311TRPBF MOSFET N CH 30V 32A PQFN5X6
IRFH8316TRPBF MOSFET N-CH 30V 27A PQFN5X6
IRFH8318TRPBF MOSFET N-CH 30V 50A 5X6 PQFN
IRFH8318TR2PBF IGBT Transistors MOSFET MOSFT 30V 50A 3.1mOhm 21nC Qg
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