 |  | | |
| PartNumber | IRFI4212H-117P | IRFI4212H | IRFI4212H-117P 2000 |
| Description | MOSFET MOSFT DUAL NCh 100V 11A 5-Pin | ||
| Manufacturer | Infineon | Infineon Technologies | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-220FP-5 | - | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 11 A | - | - |
| Rds On Drain Source Resistance | 58 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 12 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Pd Power Dissipation | 18 W | - | - |
| Configuration | Dual | Half-Bridge | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Tube | Tube | - |
| Height | 16.15 mm | - | - |
| Length | 10.65 mm | - | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 4.85 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 4.3 ns | 4.3 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8.3 ns | 8.3 ns | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 9.5 ns | 9.5 ns | - |
| Typical Turn On Delay Time | 4.7 ns | 4.7 ns | - |
| Part # Aliases | SP001560448 | - | - |
| Unit Weight | 0.211644 oz | 0.211644 oz | - |
| Series | - | - | - |
| Package Case | - | TO-220-5 Full Pack | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Through Hole | - |
| Supplier Device Package | - | TO-220-5 Full-Pak | - |
| FET Type | - | 2 N-Channel (Dual) | - |
| Power Max | - | 18W | - |
| Drain to Source Voltage Vdss | - | 100V | - |
| Input Capacitance Ciss Vds | - | 490pF @ 50V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 11A | - |
| Rds On Max Id Vgs | - | 72.5 mOhm @ 6.6A, 10V | - |
| Vgs th Max Id | - | 5V @ 250μA | - |
| Gate Charge Qg Vgs | - | 18nC @ 10V | - |
| Pd Power Dissipation | - | 18 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 11 A | - |
| Vds Drain Source Breakdown Voltage | - | 100 V | - |
| Rds On Drain Source Resistance | - | 58 mOhms | - |
| Qg Gate Charge | - | 12 nC | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFI4212H-117P | MOSFET MOSFT DUAL NCh 100V 11A 5-Pin | |
| IRFI4212H-117P | MOSFET 2N-CH 100V 11A TO-220FP-5 | ||
| IRFI4212H117P | New and Original | ||
| IRFI4212H | New and Original | ||
| IRFI4212H-117P 2000 | New and Original | ||
| IRFI4212H-117PBF | New and Original |