 |  | | |
| PartNumber | IRFI620G | IRFI620 | IRFI620GPBF |
| Description | MOSFET RECOMMENDED ALT 844-IRFI620GPBF | MOSFET N-CH 200V 4.1A TO220FP | IGBT Transistors MOSFET N-Chan 200V 4.1 Amp |
| Manufacturer | Vishay | - | IR |
| Product Category | MOSFET | - | FETs - Single |
| RoHS | N | - | - |
| Technology | Si | - | Si |
| Mounting Style | Through Hole | - | Through Hole |
| Package / Case | TO-220-3 | - | - |
| Packaging | Tube | - | Tube |
| Height | 15.49 mm | - | - |
| Length | 10.41 mm | - | - |
| Series | IRFI | - | - |
| Width | 4.7 mm | - | - |
| Brand | Vishay / Siliconix | - | - |
| Product Type | MOSFET | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Unit Weight | 0.211644 oz | - | 0.211644 oz |
| Package Case | - | - | TO-220-3 |
| Number of Channels | - | - | 1 Channel |
| Configuration | - | - | Single |
| Transistor Type | - | - | 1 N-Channel |
| Pd Power Dissipation | - | - | 30 W |
| Maximum Operating Temperature | - | - | + 150 C |
| Minimum Operating Temperature | - | - | - 55 C |
| Fall Time | - | - | 13 ns |
| Rise Time | - | - | 22 ns |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 4.1 A |
| Vds Drain Source Breakdown Voltage | - | - | 200 V |
| Rds On Drain Source Resistance | - | - | 800 mOhms |
| Transistor Polarity | - | - | N-Channel |
| Typical Turn Off Delay Time | - | - | 19 ns |
| Typical Turn On Delay Time | - | - | 7.2 ns |
| Channel Mode | - | - | Enhancement |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Vishay / Siliconix |
IRFI620G | MOSFET RECOMMENDED ALT 844-IRFI620GPBF | |
Vishay |
IRFI620 | MOSFET N-CH 200V 4.1A TO220FP | |
| IRFI620G | MOSFET N-Chan 200V 4.1 Amp | ||
| IRFI620GPBF | IGBT Transistors MOSFET N-Chan 200V 4.1 Amp | ||
| IRFI620G-706N | New and Original |