PartNumber | IRFI640GPBF | IRFI640G | IRFI644G |
Description | MOSFET N-CH 200V HEXFET MOSFET | MOSFET N-Chan 200V 9.8 Amp | MOSFET N-Chan 250V 7.9 Amp |
Manufacturer | Vishay | IR | |
Product Category | MOSFET | FETs - Single | FETs - Single |
RoHS | E | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | TO-220-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 200 V | - | - |
Id Continuous Drain Current | 9.8 A | - | - |
Rds On Drain Source Resistance | 180 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 2 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 70 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 40 W | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Packaging | Tube | - | - |
Series | IRFI | - | - |
Transistor Type | 1 N-Channel | - | - |
Brand | Vishay / Siliconix | - | - |
Forward Transconductance Min | 5.2 S | - | - |
Fall Time | 36 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 51 ns | - | - |
Factory Pack Quantity | 50 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 45 ns | - | - |
Typical Turn On Delay Time | 14 ns | - | - |
Unit Weight | 0.211644 oz | - | - |