PartNumber | IRFP4668PBF | IRFP4768PBF | IRFP4710PBF |
Description | MOSFET MOSFT 200V 130A 9.7mOhm 161nC Qg | MOSFET MOSFT 250V 83A 21mOhm 195nC Qg | MOSFET MOSFT 100V 72A 14mOhm 110nCAC |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 200 V | 250 V | 100 V |
Id Continuous Drain Current | 130 A | 93 A | 72 A |
Rds On Drain Source Resistance | 9.7 mOhms | 17.5 mOhms | 110 mOhms |
Vgs Gate Source Voltage | 30 V | 20 V | 20 V |
Qg Gate Charge | 161 nC | 180 nC | 110 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 520 W | 520 W | 190 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Tube | Tube | Tube |
Height | 20.7 mm | 20.7 mm | 20.7 mm |
Length | 15.87 mm | 15.87 mm | 15.87 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5.31 mm | 5.31 mm | 5.31 mm |
Brand | Infineon Technologies | Infineon / IR | Infineon Technologies |
Forward Transconductance Min | 150 S | 100 S | - |
Fall Time | 74 ns | 110 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 105 ns | 160 ns | - |
Factory Pack Quantity | 400 | 400 | 400 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 64 ns | 57 ns | - |
Typical Turn On Delay Time | 41 ns | 36 ns | - |
Part # Aliases | SP001572854 | SP001571028 | SP001575990 |
Unit Weight | 1.340411 oz | 1.340411 oz | 1.340411 oz |