| PartNumber | IRFP048PBF | IRFP048NPBF | IRFP048N |
| Description | MOSFET N-CH 60V HEXFET MOSFET | MOSFET 55V 1 N-CH HEXFET 16mOhms 59.3nC | MOSFET N-CH 55V 64A TO-247AC |
| Manufacturer | Vishay | Infineon | IOR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | E | Y | - |
| Technology | Si | Si | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package / Case | TO-247-3 | TO-247-3 | - |
| Packaging | Tube | Tube | - |
| Height | 20.82 mm | 20.7 mm | - |
| Length | 15.87 mm | 15.87 mm | - |
| Series | IRFP | - | - |
| Width | 5.31 mm | 5.31 mm | - |
| Brand | Vishay / Siliconix | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 500 | 400 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 1.340411 oz | 1.340411 oz | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 55 V | - |
| Id Continuous Drain Current | - | 64 A | - |
| Rds On Drain Source Resistance | - | 16 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 4 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 89 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 140 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Type | - | HEXFET Power MOSFET | - |
| Forward Transconductance Min | - | 22 S | - |
| Fall Time | - | 48 ns | - |
| Rise Time | - | 78 ns | - |
| Typical Turn Off Delay Time | - | 32 ns | - |
| Typical Turn On Delay Time | - | 11 ns | - |
| Part # Aliases | - | SP001567000 | - |