IRFR18N15DTRR

IRFR18N15DTRRP vs IRFR18N15DTRR

 
PartNumberIRFR18N15DTRRPIRFR18N15DTRR
DescriptionMOSFET 150V 1 N-CH HEXFET 125mOhms 28nCMOSFET N-CH 150V 18A DPAK
ManufacturerInfineon-
Product CategoryMOSFET-
RoHSY-
TechnologySi-
Mounting StyleSMD/SMT-
Package / CaseTO-252-3-
Number of Channels1 Channel-
Transistor PolarityN-Channel-
Vds Drain Source Breakdown Voltage150 V-
Id Continuous Drain Current18 A-
Rds On Drain Source Resistance125 mOhms-
Vgs Gate Source Voltage30 V-
Qg Gate Charge28 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 175 C-
Pd Power Dissipation110 W-
ConfigurationSingle-
Channel ModeEnhancement-
PackagingReel-
Height2.3 mm-
Length6.5 mm-
Transistor Type1 N-Channel-
TypeSmps MOSFET-
Width6.22 mm-
BrandInfineon Technologies-
Fall Time9.8 ns-
Product TypeMOSFET-
Rise Time25 ns-
Factory Pack Quantity3000-
SubcategoryMOSFETs-
Typical Turn Off Delay Time15 ns-
Typical Turn On Delay Time8.8 ns-
Part # AliasesSP001566908-
Unit Weight0.139332 oz-
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRFR18N15DTRRP MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC
IRFR18N15DTRR MOSFET N-CH 150V 18A DPAK
IRFR18N15DTRRP RF Bipolar Transistors MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC
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