 | |  | |
| PartNumber | IRFR3410TRLPBF | IRFR3410TRPBF | IRFR3410PBF |
| Description | MOSFET MOSFT 100V 31A 39mOhm 37nC | MOSFET 100V SINGLE N-CH 39mOhms 37nC | MOSFET N-CH 100V 31A DPAK |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 31 A | 31 A | - |
| Rds On Drain Source Resistance | 34 mOhms | 39 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 37 nC | 37 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 110 W | 110 W | - |
| Configuration | Single | Single | Single |
| Packaging | Reel | Reel | Tube |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon / IR | Infineon Technologies | - |
| Forward Transconductance Min | 33 S | 33 S | - |
| Fall Time | 13 ns | 13 ns | 13 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 27 ns | 27 ns | 27 ns |
| Factory Pack Quantity | 3000 | 2000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns | 40 ns | 40 ns |
| Typical Turn On Delay Time | 12 ns | 12 ns | 12 ns |
| Part # Aliases | SP001572792 | SP001578202 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Channel Mode | - | Enhancement | Enhancement |
| Type | - | HEXFET Power MOSFET | - |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 110 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 31 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 39 mOhms |
| Qg Gate Charge | - | - | 37 nC |
| Forward Transconductance Min | - | - | 33 S |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFR3411TRPBF | MOSFET MOSFT 100V 32A 44mOhm 48nC | |
| IRFR3410TRPBF | MOSFET 100V SINGLE N-CH 39mOhms 37nC | ||
| IRFR3410TRPBF | MOSFET N-CH 100V 31A DPAK | ||
| IRFR3410TRLPBF | MOSFET N-CH 100V 31A DPAK | ||
| IRFR3412TRPBF | MOSFET N-CH 100V 48A DPAK | ||
| IRFR3418PBF | MOSFET N-CH 80V 70A DPAK | ||
| IRFR3418TRPBF | MOSFET N-CH 80V 70A DPAK | ||
| IRFR3410TRRPBF | MOSFET N-CH 100V 31A DPAK | ||
| IRFR3412TRLPBF | MOSFET N-CH 100V 48A DPAK | ||
| IRFR3412TRRPBF | MOSFET N-CH 100V 48A DPAK | ||
| IRFR3418TRLPBF | MOSFET N-CH 80V 70A DPAK | ||
| IRFR3410PBF | MOSFET N-CH 100V 31A DPAK | ||
| IRFR3411PBF | MOSFET N-CH 100V 32A DPAK | ||
| IRFR3411TRPBF | MOSFET N-CH 100V 32A DPAK | ||
| IRFR3412PBF | MOSFET N-CH 100V 48A DPAK | ||
Infineon / IR |
IRFR3410TRLPBF | MOSFET MOSFT 100V 31A 39mOhm 37nC | |
| IRFR3410TRRPBF | MOSFET 100V SINGLE N-CH 39mOhms 37nC | ||
| IRFR3410TRLPBF-CUT TAPE | New and Original | ||
| IRFR3410TRPBF-CUT TAPE | New and Original | ||
| IRFR3410 | New and Original | ||
| IRFR3410PBF , 2SK1576 | New and Original | ||
| IRFR3410PBF,IRFR3410TRPB | New and Original | ||
| IRFR3410TR | MOSFET, N CH, 100V, 31A, TO-252AA-3 | ||
| IRFR3410TRPBF,IRFR3410, | New and Original | ||
| IRFR3410TRPBF. | Transistor Polarity:N Channel, Continuous Drain Current Id:31A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.034ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi | ||
| IRFR3411 | MOSFET N-CHANNEL 100V 32A DPAK, PK | ||
| IRFR3412TR | New and Original |