IRFR3504

IRFR3504TRPBF vs IRFR3504PBF vs IRFR3504TRLPBF

 
PartNumberIRFR3504TRPBFIRFR3504PBFIRFR3504TRLPBF
DescriptionMOSFET MOSFT 40V 87A 9.2mOhm 48nCMOSFET N-CH 40V 30A DPAKMOSFET N-CH 40V 30A DPAK
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current87 A--
Rds On Drain Source Resistance9.2 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Qg Gate Charge71 nC--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation140 W--
ConfigurationSingle--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
Width6.22 mm--
BrandInfineon / IR--
Forward Transconductance Min40 S--
Fall Time22 ns--
Product TypeMOSFET--
Rise Time53 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Part # AliasesSP001566890--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRFR3504ZTRPBF MOSFET MOSFT 40V 77A 9mOhm 30nC Qg
IRFR3504TRPBF MOSFET MOSFT 40V 87A 9.2mOhm 48nC
Infineon Technologies
Infineon Technologies
IRFR3504PBF MOSFET N-CH 40V 30A DPAK
IRFR3504ZTR MOSFET N-CH 40V 42A DPAK
IRFR3504ZTRL MOSFET N-CH 40V 42A DPAK
IRFR3504ZTRR MOSFET N-CH 40V 42A DPAK
IRFR3504TRLPBF MOSFET N-CH 40V 30A DPAK
IRFR3504TRRPBF MOSFET N-CH 40V 30A DPAK
IRFR3504TRPBF MOSFET N-CH 40V 30A DPAK
IRFR3504ZTRPBF MOSFET N-CH 40V 42A DPAK
IRFR3504ZTRRPBF MOSFET N-CH 40V 42A DPAK
IRFR3504ZTRLPBF RF Bipolar Transistors MOSFET 40V 1 N-CH HEXFET 9mOhms 30nC
IRFR3504 New and Original
IRFR3504ZPBF MOSFET, Power, N-Ch, VDSS 40V, RDS(ON) 7.3 Milliohms, ID 42A, D-Pak (TO-252AA), PD 90W
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