PartNumber | IRFR3709ZTRLPBF | IRFR3709ZTRPBF | IRFR3709ZTRRPBF |
Description | MOSFET MOSFT 30V 86A 6.5mOhm 17nC | MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC | MOSFET 30V 1 N-CH HEXFET 6.5mOhms 17nC |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-252-3 | TO-252-3 | TO-252-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
Id Continuous Drain Current | 86 A | 86 A | 86 A |
Rds On Drain Source Resistance | 6.5 mOhms | 6.5 mOhms | 6.5 mOhms |
Vgs th Gate Source Threshold Voltage | 2.25 V | 2.25 V | 2.25 V |
Qg Gate Charge | 26 nC | 17 nC | 17 nC |
Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
Pd Power Dissipation | 79 W | 79 W | 79 W |
Configuration | Single | Single | Single |
Packaging | Reel | Reel | Reel |
Height | 2.3 mm | 2.3 mm | 2.3 mm |
Length | 6.5 mm | 6.5 mm | 6.5 mm |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 6.22 mm | 6.22 mm | 6.22 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 51 S | 51 S | 51 S |
Fall Time | 3.9 ns | 3.9 ns | 3.9 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 12 ns | 12 ns | 12 ns |
Factory Pack Quantity | 3000 | 2000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Part # Aliases | SP001556992 | SP001573340 | SP001578152 |
Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Channel Mode | - | Enhancement | Enhancement |
Typical Turn Off Delay Time | - | 15 ns | 15 ns |
Typical Turn On Delay Time | - | 12 ns | 12 ns |