IRFR3710

IRFR3710ZPBF vs IRFR3710ZTR vs IRFR3710ZTRL

 
PartNumberIRFR3710ZPBFIRFR3710ZTRIRFR3710ZTRL
DescriptionMOSFET 100V 1 N-CH HEXFET 18mOhms 69nCMOSFET N-CH 100V 42A DPAKMOSFET N-CH 100V 42A DPAK
ManufacturerInfineon--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current56 A--
Rds On Drain Source Resistance18 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge69 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation140 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel--
TypeAutomotive MOSFET--
Width6.22 mm--
BrandInfineon Technologies--
Fall Time42 ns--
Product TypeMOSFET--
Rise Time43 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time53 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesSP001555090--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRFR3710ZTRLPBF MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC
IRFR3710ZTRPBF MOSFET MOSFT 100V 56A 18mOhm 69nC Qg
Infineon Technologies
Infineon Technologies
IRFR3710ZPBF MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC
Infineon Technologies
Infineon Technologies
IRFR3710ZTRLPBF MOSFET N-CH 100V 42A DPAK
IRFR3710ZTR MOSFET N-CH 100V 42A DPAK
IRFR3710ZTRL MOSFET N-CH 100V 42A DPAK
IRFR3710ZTRR MOSFET N-CH 100V 42A DPAK
IRFR3710ZPBF MOSFET N-CH 100V 42A DPAK
IRFR3710ZTRPBF MOSFET N-CH 100V 42A DPAK
IRFR3710ZTRRPBF RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC
IRFR3710ZTRPBF-CUT TAPE New and Original
IRFR3710ZTRPBF. New and Original
IRFR3710Z INSTOCK
IRFR3710Z,IRFR3710ZTRPBF New and Original
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