IRFR41

IRFR4104PBF vs IRFR4104TR vs IRFR4104TRL

 
PartNumberIRFR4104PBFIRFR4104TRIRFR4104TRL
DescriptionMOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nCMOSFET N-CH 40V 42A DPAKMOSFET N-CH 40V 42A DPAK
ManufacturerInfineon-IR
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current119 A--
Rds On Drain Source Resistance5.5 mOhms--
Vgs th Gate Source Threshold Voltage4 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge59 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation140 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
PackagingTube-Reel
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel-1 N-Channel
TypeHEXFET Power MOSFET--
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min58 S--
Fall Time36 ns-36 ns
Product TypeMOSFET--
Rise Time69 ns-69 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time37 ns-37 ns
Typical Turn On Delay Time17 ns-17 ns
Part # AliasesSP001575910--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--140 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--119 A
Vds Drain Source Breakdown Voltage--40 V
Vgs th Gate Source Threshold Voltage--4 V
Rds On Drain Source Resistance--5.5 mOhms
Qg Gate Charge--59 nC
Forward Transconductance Min--58 S
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRFR4104TRLPBF MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC
IRFR4105ZTRPBF MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg
IRFR4104TRRPBF MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC
IRFR4105TRLPBF MOSFET N-CH 55V 27A DPAK
IRFR4104TR MOSFET N-CH 40V 42A DPAK
IRFR4105ZTR MOSFET N-CH 55V 30A DPAK
IRFR4105ZTRL MOSFET N-CH 55V 30A DPAK
IRFR4105ZTRR MOSFET N-CH 55V 30A DPAK
IRFR4105ZTRRPBF MOSFET N-CH 55V 30A DPAK
IRFR4105ZTRLPBF MOSFET N-CH 55V 30A DPAK
IRFR4104TRL MOSFET N-CH 40V 42A DPAK
IRFR4104TRPBF MOSFET N-CH 40V 42A DPAK
IRFR4104TRR MOSFET N-CH 40V 42A DPAK
IRFR4105TR MOSFET N-CH 55V 27A DPAK
IRFR4105TRL MOSFET N-CH 55V 27A DPAK
IRFR4105TRPBF MOSFET N-CH 55V 27A DPAK
IRFR4105TRR MOSFET N-CH 55V 27A DPAK
IRFR4105Z MOSFET N-CH 55V 30A DPAK
IRFR4105ZPBF MOSFET N-CH 55V 30A DPAK
IRFR4105ZTRPBF MOSFET N-CH 55V 30A DPAK
IRFR4104PBF IGBT Transistors MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC
IRFR4105PBF IGBT Transistors MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC
IRFR4104TRLPBF RF Bipolar Transistors MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC
IRFR4104TRRPBF RF Bipolar Transistors MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC
Infineon / IR
Infineon / IR
IRFR4105TRPBF MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC
IRFR4104TRPBF MOSFET MOSFT 40V 119A 5.5mOhm 59nC Qg
IRFR4105TRLPBF MOSFET MOSFT 55V 25A 45mOhm 22.7nC
IRFR4105ZTRLPBF MOSFET 55V 1 N-CH HEXFET 24.5mOhms 18nC
Infineon Technologies
Infineon Technologies
IRFR4104PBF MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC
IRFR4105TRLPBF. New and Original
IRFR4105TRPBF. PLANAR_MOSFETS
IRFR4104TRPBF-CUT TAPE New and Original
IRFR4105TRPBF-CUT TAPE New and Original
IRFR4105ZTRPBF-CUT TAPE New and Original
IRFR410 New and Original
IRFR4104 Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IRFR4104PBF?? Trans MOSFET N-CH Si 40V 119A 3-Pin(2+Tab) DPAK Tube
IRFR4104TRPBF,FR4104,AUI New and Original
IRFR4105 MOSFET Transistor, N-Channel, TO-252AA
IRFR4105TRRPBF New and Original
IRFR4105Z IRFR4105 New and Original
IRFR4105ZPBF,FR4105Z,IRF New and Original
IRFR4105ZTRPBF. New and Original
IRFR410B New and Original
IRFR410TM New and Original
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