PartNumber | IRFR4104PBF | IRFR4104TR | IRFR4104TRL |
Description | MOSFET 40V 1 N-CH HEXFET 5.5mOhms 59nC | MOSFET N-CH 40V 42A DPAK | MOSFET N-CH 40V 42A DPAK |
Manufacturer | Infineon | - | IR |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | - | 1 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 40 V | - | - |
Id Continuous Drain Current | 119 A | - | - |
Rds On Drain Source Resistance | 5.5 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 59 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 175 C | - | + 175 C |
Pd Power Dissipation | 140 W | - | - |
Configuration | Single | - | Single |
Channel Mode | Enhancement | - | Enhancement |
Packaging | Tube | - | Reel |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Transistor Type | 1 N-Channel | - | 1 N-Channel |
Type | HEXFET Power MOSFET | - | - |
Width | 6.22 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 58 S | - | - |
Fall Time | 36 ns | - | 36 ns |
Product Type | MOSFET | - | - |
Rise Time | 69 ns | - | 69 ns |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 37 ns | - | 37 ns |
Typical Turn On Delay Time | 17 ns | - | 17 ns |
Part # Aliases | SP001575910 | - | - |
Unit Weight | 0.139332 oz | - | 0.139332 oz |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 140 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 119 A |
Vds Drain Source Breakdown Voltage | - | - | 40 V |
Vgs th Gate Source Threshold Voltage | - | - | 4 V |
Rds On Drain Source Resistance | - | - | 5.5 mOhms |
Qg Gate Charge | - | - | 59 nC |
Forward Transconductance Min | - | - | 58 S |