 |  | | |
| PartNumber | IRFR4105TRPBF | IRFR4105TRPBF. | IRFR4105TRPBF-CUT TAPE |
| Description | MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC | PLANAR_MOSFETS | |
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 55 V | - | - |
| Id Continuous Drain Current | 27 A | - | - |
| Rds On Drain Source Resistance | 45 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 4 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 34 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 68 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 2.3 mm | - | - |
| Length | 6.5 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Type | HEXFET Power MOSFET | - | - |
| Width | 6.22 mm | - | - |
| Brand | Infineon / IR | - | - |
| Forward Transconductance Min | 6.5 S | - | - |
| Fall Time | 40 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 49 ns | - | - |
| Factory Pack Quantity | 2000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 31 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Part # Aliases | SP001567638 | - | - |
| Unit Weight | 0.139332 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
IRFR4105TRPBF | MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC | |
| IRFR4105TRPBF. | PLANAR_MOSFETS | ||
| IRFR4105TRPBF-CUT TAPE | New and Original | ||
Infineon Technologies |
IRFR4105TRPBF | MOSFET N-CH 55V 27A DPAK |