 | |  | |
| PartNumber | IRFR48ZTRLPBF | IRFR48ZTRPBF | IRFR48ZPBF |
| Description | MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC | MOSFET MOSFT 55V 62A 11mOhm 40nC Qg | Darlington Transistors MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
| Id Continuous Drain Current | 62 A | 62 A | - |
| Rds On Drain Source Resistance | 11 mOhms | 11 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 40 nC | 60 nC | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 91 W | 91 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | - | Enhancement |
| Packaging | Reel | Reel | Tube |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Forward Transconductance Min | 120 S | 120 S | - |
| Fall Time | 35 ns | 35 ns | 35 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 61 ns | 61 ns | 61 ns |
| Factory Pack Quantity | 3000 | 2000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 40 ns | - | 40 ns |
| Typical Turn On Delay Time | 15 ns | - | 15 ns |
| Part # Aliases | SP001575902 | SP001575894 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 91 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 62 A |
| Vds Drain Source Breakdown Voltage | - | - | 55 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 11 mOhms |
| Qg Gate Charge | - | - | 40 nC |
| Forward Transconductance Min | - | - | 120 S |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFR48ZTRLPBF | MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC | |
| IRFR48ZPBF | Darlington Transistors MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC | ||
| IRFR48ZTRPBF | Darlington Transistors MOSFET MOSFT 55V 62A 11mOhm 40nC Qg | ||
| IRFR48ZTRLPBF | RF Bipolar Transistors MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC | ||
Infineon / IR |
IRFR48ZTRPBF | MOSFET MOSFT 55V 62A 11mOhm 40nC Qg | |
| IRFR48Z | Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |