 | |  | |
| PartNumber | IRFR540ZTRPBF | IRFR540ZTRLPBF | IRFR540ZPBF |
| Description | MOSFET MOSFT 100V 35A 28.5mOhm 39nC Qg | MOSFET 100V SINGLE N-CH 28.5mOhms 39nC | MOSFET N-CH 100V 35A DPAK |
| Manufacturer | Infineon | Infineon | IR |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | - |
| Id Continuous Drain Current | 35 A | 35 A | - |
| Rds On Drain Source Resistance | 28.5 mOhms | 28.5 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
| Qg Gate Charge | 59 nC | 39 nC | - |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 91 W | 91 W | - |
| Configuration | Single | Single | Single |
| Packaging | Reel | Reel | Tube |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Forward Transconductance Min | 28 S | 28 S | - |
| Fall Time | 34 ns | 34 ns | 34 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 42 ns | 42 ns | 42 ns |
| Factory Pack Quantity | 2000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | SP001578120 | SP001567620 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Vgs Gate Source Voltage | - | 20 V | - |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Channel Mode | - | Enhancement | - |
| Typical Turn Off Delay Time | - | 43 ns | 43 ns |
| Typical Turn On Delay Time | - | 14 ns | 14 ns |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 91 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 35 A |
| Vds Drain Source Breakdown Voltage | - | - | 100 V |
| Vgs th Gate Source Threshold Voltage | - | - | 4 V |
| Rds On Drain Source Resistance | - | - | 22.5 mOhms |
| Qg Gate Charge | - | - | 39 nC |
| Forward Transconductance Min | - | - | 28 S |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon / IR |
IRFR540ZTRPBF | MOSFET MOSFT 100V 35A 28.5mOhm 39nC Qg | |
| IRFR540ZTRLPBF | MOSFET 100V SINGLE N-CH 28.5mOhms 39nC | ||
| IRFR540ZTRRPBF | MOSFET 100V SINGLE N-CH 28.5mOhms 39nC | ||
Infineon Technologies |
IRFR540ZTRRPBF | MOSFET N-CH 100V 35A DPAK | |
| IRFR540ZPBF | MOSFET N-CH 100V 35A DPAK | ||
| IRFR540ZTRPBF | MOSFET N-CH 100V 35A DPAK | ||
| IRFR540ZTRLPBF | RF Bipolar Transistors MOSFET 100V SINGLE N-CH 28.5mOhms 39nC | ||
| IRFR540Z | New and Original |