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IRFR541

IRFR5410TRL vs IRFR5410TR vs IRFR5410PBF

 
PartNumberIRFR5410TRLIRFR5410TRIRFR5410PBF
DescriptionMOSFET P-CH 100V 13A DPAKMOSFET P-CH 100V 13A DPAKMOSFET P-CH 100V 13A DPAK
ManufacturerIR-INTERNATIONAL RECTIFIER
Product CategoryFETs - Single-FETs - Single
Packaging--Tube
Unit Weight--0.139332 oz
Mounting Style--SMD/SMT
Package Case--TO-252-3
Technology--Si
Number of Channels--1 Channel
Configuration--Single
Transistor Type--1 P-Channel
Pd Power Dissipation--66 W
Maximum Operating Temperature--+ 150 C
Minimum Operating Temperature--- 55 C
Fall Time--46 ns
Rise Time--58 ns
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--13 A
Vds Drain Source Breakdown Voltage--- 100 V
Rds On Drain Source Resistance--205 mOhms
Transistor Polarity--P-Channel
Typical Turn Off Delay Time--45 ns
Typical Turn On Delay Time--15 ns
Qg Gate Charge--38.7 nC
Channel Mode--Enhancement
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies 		IRFR5410TRPBF MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC
IRFR5410TRLPBF MOSFET MOSFT PCh -100V 13A 205mOhm 38.7nC
IRFR5410TRL MOSFET P-CH 100V 13A DPAK
IRFR5410TRLPBF MOSFET P-CH 100V 13A DPAK
IRFR5410TR MOSFET P-CH 100V 13A DPAK
IRFR5410TRR MOSFET P-CH 100V 13A DPAK
IRFR5410PBF MOSFET P-CH 100V 13A DPAK
IRFR5410TRPBF MOSFET P-CH 100V 13A DPAK
IRFR5410TRRPBF RF Bipolar Transistors MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC
Infineon / IR
Infineon / IR 		IRFR5410TRRPBF MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC
IRFR5410TRPBF-CUT TAPE New and Original
IRFR5410 MOSFET Transistor, P-Channel, TO-252AA
IRFR5410TR,IRFR5410TRPBF New and Original
IRFR5410TRPBF,FR5410,IRF New and Original
IRFR5410TRPBF,IRFR5410TR New and Original
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