IRFR5410T

IRFR5410TRLPBF vs IRFR5410TRL vs IRFR5410TR

 
PartNumberIRFR5410TRLPBFIRFR5410TRLIRFR5410TR
DescriptionMOSFET MOSFT PCh -100V 13A 205mOhm 38.7nCMOSFET P-CH 100V 13A DPAKMOSFET P-CH 100V 13A DPAK
ManufacturerInfineonIR-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-252-3--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance205 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge38.7 nC--
Pd Power Dissipation66 W--
ConfigurationSingle--
PackagingReel--
Height2.3 mm--
Length6.5 mm--
Transistor Type1 P-Channel--
Width6.22 mm--
BrandInfineon Technologies--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Part # AliasesSP001578112--
Unit Weight0.139332 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRFR5410TRPBF MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC
IRFR5410TRLPBF MOSFET MOSFT PCh -100V 13A 205mOhm 38.7nC
IRFR5410TRL MOSFET P-CH 100V 13A DPAK
IRFR5410TRLPBF MOSFET P-CH 100V 13A DPAK
IRFR5410TR MOSFET P-CH 100V 13A DPAK
IRFR5410TRR MOSFET P-CH 100V 13A DPAK
IRFR5410TRPBF MOSFET P-CH 100V 13A DPAK
IRFR5410TRRPBF RF Bipolar Transistors MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC
Infineon / IR
Infineon / IR
IRFR5410TRRPBF MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC
IRFR5410TRPBF-CUT TAPE New and Original
IRFR5410TR,IRFR5410TRPBF New and Original
IRFR5410TRPBF,FR5410,IRF New and Original
IRFR5410TRPBF,IRFR5410TR New and Original
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