| PartNumber | IRFR7440TRPBF | IRFR7440PBF | IRFR7446PBF |
| Description | MOSFET 40V 90A 2.5mOhm 89nC StrongIRFET | MOSFET 40V, 90A, 2.5 mOhm 89 nC Qg, D-Pak | Darlington Transistors MOSFET MOSFET N-CH 40V 56A DPAK |
| Manufacturer | Infineon | Infineon | International Rectifier |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 90 A | 180 A | - |
| Rds On Drain Source Resistance | 2.4 mOhms | 2.4 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3.9 V | 3.9 V | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 89 nC | 134 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Pd Power Dissipation | 140 W | 140 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | StrongIRFET | StrongIRFET | - |
| Packaging | Reel | Tube | Tube |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | HEXFET Power MOSFET | - | - |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon / IR | - |
| Forward Transconductance Min | 280 S | 280 S | - |
| Fall Time | 34 ns | 34 ns | 20 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 39 ns | 39 ns | 13 ns |
| Factory Pack Quantity | 2000 | 75 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 51 ns | 51 ns | 32 ns |
| Typical Turn On Delay Time | 11 ns | 11 ns | 9.8 ns |
| Part # Aliases | SP001573310 | SP001555130 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 98 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 120 A |
| Vds Drain Source Breakdown Voltage | - | - | 40 V |
| Vgs th Gate Source Threshold Voltage | - | - | 2.2 V to 3.9 V |
| Rds On Drain Source Resistance | - | - | 3 mOhms |
| Qg Gate Charge | - | - | 65 nC |
| Forward Transconductance Min | - | - | 170 S |