IRFR9

IRFR9N20DTRPBF vs IRFR9N20DTRLPBF vs IRFR9N20DTRR

 
PartNumberIRFR9N20DTRPBFIRFR9N20DTRLPBFIRFR9N20DTRR
DescriptionMOSFET 200V 1 N-CH HEXFET 380mOhms 18nCMOSFET MOSFT 200V 9.4A 380mOhm 18nCMOSFET N-CH 200V 9.4A DPAK
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage200 V200 V-
Id Continuous Drain Current9.4 A9.4 A-
Rds On Drain Source Resistance380 mOhms380 mOhms-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge18 nC18 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation86 W86 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel-
TypeSmps MOSFET--
Width6.22 mm6.22 mm-
BrandInfineon / IRInfineon / IR-
Fall Time9.3 ns9.3 ns-
Product TypeMOSFETMOSFET-
Rise Time16 ns16 ns-
Factory Pack Quantity20003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time13 ns13 ns-
Typical Turn On Delay Time7.5 ns7.5 ns-
Part # AliasesSP001552256SP001578328-
Unit Weight0.139332 oz0.139332 oz-
Forward Transconductance Min-4.3 S-
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRFR9N20DTRPBF MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC
Infineon Technologies
Infineon Technologies
IRFR9N20DTRR MOSFET N-CH 200V 9.4A DPAK
IRFR9N20DTRLPBF MOSFET N-CH 200V 9.4A DPAK
IRFR9N20DTRPBF MOSFET N-CH 200V 9.4A DPAK
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