PartNumber | IRFS4310TRLPBF | IRFS4310ZPBF | IRFS4310TRRPBF |
Description | MOSFET MOSFT 100V 140A 7mOhm 170nC | Darlington Transistors MOSFET 100V 1 N-CH HEXFET 6mOhms 120nC | RF Bipolar Transistors MOSFET 100V 1 N-CH HEXFET 7mOhms 170nC |
Manufacturer | Infineon | IOR | IR |
Product Category | MOSFET | FETs - Single | FETs - Single |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 130 A | - | - |
Rds On Drain Source Resistance | 5.6 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 4 V | - | - |
Vgs Gate Source Voltage | 20 V | - | - |
Qg Gate Charge | 170 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 175 C | - | - |
Pd Power Dissipation | 300 W | - | - |
Configuration | Single | Single Dual Drain | - |
Packaging | Reel | Tube | - |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 160 S | - | - |
Fall Time | 78 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 110 ns | - | - |
Factory Pack Quantity | 800 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 68 ns | - | - |
Typical Turn On Delay Time | 26 ns | - | - |
Part # Aliases | SP001552304 | - | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Package Case | - | TO-252-3 | - |
Pd Power Dissipation | - | 250 W | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 127 A | - |
Vds Drain Source Breakdown Voltage | - | 100 V | - |
Rds On Drain Source Resistance | - | 4.8 mOhms | - |
Qg Gate Charge | - | 120 nC | - |