 | | |
| PartNumber | IRFS4610TRLPBF | IRFS4610TRRPBF |
| Description | MOSFET MOSFT 100V 73A 14mOhm 90nC Qg | MOSFET 100V 1 N-CH HEXFET 14mOhms 90nC |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V |
| Id Continuous Drain Current | 73 A | 73 A |
| Rds On Drain Source Resistance | 14 mOhms | 14 mOhms |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 90 nC | 90 nC |
| Pd Power Dissipation | 190 W | 190 W |
| Configuration | Single | Single |
| Packaging | Reel | Reel |
| Height | 2.3 mm | 2.3 mm |
| Length | 6.5 mm | 6.5 mm |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm |
| Brand | Infineon Technologies | Infineon / IR |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 800 | 800 |
| Subcategory | MOSFETs | MOSFETs |
| Part # Aliases | SP001568016 | SP001573460 |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 175 C |
| Channel Mode | - | Enhancement |
| Forward Transconductance Min | - | 73 S |
| Fall Time | - | 70 ns |
| Rise Time | - | 87 ns |
| Typical Turn Off Delay Time | - | 53 ns |
| Typical Turn On Delay Time | - | 18 ns |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
IRFS4610TRLPBF | MOSFET MOSFT 100V 73A 14mOhm 90nC Qg | |
| IRFS4610TRRPBF | MOSFET N-CH 100V 73A D2PAK | ||
| IRFS4610TRLPBF | MOSFET N-CH 100V 73A D2PAK | ||
Infineon / IR |
IRFS4610TRRPBF | MOSFET 100V 1 N-CH HEXFET 14mOhms 90nC | |
| IRFS4610TRPBF | New and Original |