PartNumber | IRFS7530TRL7PP | IRFS7530-7PPBF | IRFS7530PBF |
Description | MOSFET MOSFET N CH 60V 240A D2PAK | MOSFET MOSFET N CH 60V 240A D2PAK | MOSFET N CH 60V 195A D2PAK |
Manufacturer | Infineon | Infineon | International Rectifier |
Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TO-263-7 | TO-263-7 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 240 A | 338 A | - |
Rds On Drain Source Resistance | 1.4 mOhms | 1.15 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3.7 V | 3.7 V | - |
Vgs Gate Source Voltage | 20 V | 10 V | - |
Qg Gate Charge | 236 nC | 354 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 375 W | 375 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | StrongIRFET | StrongIRFET | - |
Packaging | Reel | Tube | Tube |
Height | 4.4 mm | 4.4 mm | - |
Length | 10 mm | 10 mm | - |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 9.25 mm | 9.25 mm | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Forward Transconductance Min | 249 S | 249 S | - |
Fall Time | 79 ns | 79 ns | 104 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 102 ns | 102 ns | 141 ns |
Factory Pack Quantity | 800 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 168 ns | 168 ns | 172 ns |
Typical Turn On Delay Time | 24 ns | 24 ns | 52 ns |
Part # Aliases | SP001557500 | SP001565236 | - |
Unit Weight | 0.056438 oz | 0.056438 oz | 0.139332 oz |
Package Case | - | - | TO-252-3 |
Pd Power Dissipation | - | - | 375 W |
Id Continuous Drain Current | - | - | 295 A |
Vds Drain Source Breakdown Voltage | - | - | 60 V |
Vgs th Gate Source Threshold Voltage | - | - | 3.7 V |
Rds On Drain Source Resistance | - | - | 2 mOhms |
Qg Gate Charge | - | - | 411 nC |
Forward Transconductance Min | - | - | 242 S |