IRG4BH20K-S

IRG4BH20K-STRLP vs IRG4BH20K-SPBF vs IRG4BH20K-S

 
PartNumberIRG4BH20K-STRLPIRG4BH20K-SPBFIRG4BH20K-S
DescriptionIGBT Modules 1200V ULTRAFAST 4-20KHZ DSCRETE IGBTIGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGBTIGBT 1200V 11A 60W D2PAK
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryIGBT ModulesIGBT TransistorsIGBTs - Single
RoHSYY-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max1200 V1.2 kV-
Continuous Collector Current at 25 C11 A11 A-
Package / CaseD-PAK-3DPAK-3-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingReelTubeTube
Height4.83 mm4.83 mm-
Length10.67 mm10.67 mm-
Width9.65 mm9.65 mm-
BrandInfineon TechnologiesInfineon / IR-
Mounting StyleSMD/SMTSMD/SMT-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Transistors-
Factory Pack Quantity8001000-
SubcategoryIGBTsIGBTs-
Part # AliasesSP001540346SP001536124-
Unit Weight0.009185 oz0.009185 oz-
Technology-Si-
Collector Emitter Saturation Voltage-3.17 V-
Pd Power Dissipation-60 W-
Continuous Collector Current Ic Max-11 A-
Series---
Package Case--TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D2PAK
Power Max--60W
Reverse Recovery Time trr---
Current Collector Ic Max--11A
Voltage Collector Emitter Breakdown Max--1200V
IGBT Type---
Current Collector Pulsed Icm--22A
Vce on Max Vge Ic--4.3V @ 15V, 5A
Switching Energy--450μJ (on), 440μJ (off)
Gate Charge--28nC
Td on off 25°C--23ns/93ns
Test Condition--960V, 5A, 50 Ohm, 15V
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRG4BH20K-STRLP IGBT Modules 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
IRG4BH20K-STRLP IGBT Modules 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
IRG4BH20K-SPBF IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
IRG4BH20K-S IGBT 1200V 11A 60W D2PAK
Infineon / IR
Infineon / IR
IRG4BH20K-SPBF IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
Top