IRG4RC10SDT

IRG4RC10SDTRPBF vs IRG4RC10SDTRPBFBTMA1 vs IRG4RC10SDTRLP

 
PartNumberIRG4RC10SDTRPBFIRG4RC10SDTRPBFBTMA1IRG4RC10SDTRLP
DescriptionIGBT Transistors 600V DC-1kHzIGBT 600V 14A 38W DPAKIGBT 600V 14A 38W DPAK
ManufacturerInfineon-Infineon Technologies
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.7 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C14 A--
Pd Power Dissipation38 W--
Minimum Operating Temperature- 55 C--
PackagingReel-Tape & Reel (TR) Alternate Packaging
Height2.39 mm--
Length6.73 mm--
Width6.22 mm--
BrandInfineon / IR--
Product TypeIGBT Transistors--
Factory Pack Quantity2000--
SubcategoryIGBTs--
Part # AliasesSP001542118--
Unit Weight0.012346 oz--
Series---
Package Case--TO-252-3, DPak (2 Leads + Tab), SC-63
Input Type--Standard
Mounting Type--Surface Mount
Supplier Device Package--D-Pak
Power Max--38W
Reverse Recovery Time trr--28ns
Current Collector Ic Max--14A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type---
Current Collector Pulsed Icm--18A
Vce on Max Vge Ic--1.8V @ 15V, 8A
Switching Energy--310μJ (on), 3.28mJ (off)
Gate Charge--15nC
Td on off 25°C--76ns/815ns
Test Condition--480V, 8A, 100 Ohm, 15V
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRG4RC10SDTRPBF IGBT Transistors 600V DC-1kHz
Infineon Technologies
Infineon Technologies
IRG4RC10SDTRRP IGBT Transistors 600V DC-1 KHZ (STD) COPACK IGBT
Infineon Technologies
Infineon Technologies
IRG4RC10SDTRPBFBTMA1 IGBT 600V 14A 38W DPAK
IRG4RC10SDTRRP IGBT Transistors 600V DC-1 KHZ (STD) COPACK IGBT
IRG4RC10SDTRPBF IGBT Transistors 600V DC-1kHz
IRG4RC10SDTRLP IGBT 600V 14A 38W DPAK
IRG4RC10SDTL New and Original
IRG4RC10SDTRPBF. New and Original
IRG4RC10SDTR IGBT Transistor, N-CHAN, TO-252AA
IRG4RC10SDTRL New and Original
IRG4RC10SDTRR New and Original
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