IRG4RC10ST

IRG4RC10STRRPBF vs IRG4RC10STR vs IRG4RC10STRL

 
PartNumberIRG4RC10STRRPBFIRG4RC10STRIRG4RC10STRL
DescriptionIGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBTIGBT 600V 14A 38W DPAKIGBT 600V 14A 38W DPAK
ManufacturerInfineonInfineon TechnologiesInfineon Technologies
Product CategoryIGBT TransistorsIGBTs - SingleIGBTs - Single
RoHSY--
TechnologySi--
Package / CaseDPAK-3--
Mounting StyleSMD/SMT--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.7 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C14 A--
Pd Power Dissipation38 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingReelTape & Reel (TR)Tape & Reel (TR)
Continuous Collector Current Ic Max14 A--
Height2.39 mm--
Length6.73 mm--
Width6.22 mm--
BrandInfineon / IR--
Product TypeIGBT Transistors--
Factory Pack Quantity6000--
SubcategoryIGBTs--
Part # AliasesSP001532574--
Unit Weight0.012346 oz--
Series---
Package Case-TO-252-3, DPak (2 Leads + Tab), SC-63TO-252-3, DPak (2 Leads + Tab), SC-63
Input Type-StandardStandard
Mounting Type-Surface MountSurface Mount
Supplier Device Package-D-PakD-Pak
Power Max-38W38W
Reverse Recovery Time trr---
Current Collector Ic Max-14A14A
Voltage Collector Emitter Breakdown Max-600V600V
IGBT Type---
Current Collector Pulsed Icm-18A18A
Vce on Max Vge Ic-1.8V @ 15V, 8A1.8V @ 15V, 8A
Switching Energy-140μJ (on), 2.58mJ (off)140μJ (on), 2.58mJ (off)
Gate Charge-15nC15nC
Td on off 25°C-25ns/630ns25ns/630ns
Test Condition-480V, 8A, 100 Ohm, 15V480V, 8A, 100 Ohm, 15V
Manufacturer Part # Description RFQ
Infineon / IR
Infineon / IR
IRG4RC10STRRPBF IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT
Infineon Technologies
Infineon Technologies
IRG4RC10STR IGBT 600V 14A 38W DPAK
IRG4RC10STRL IGBT 600V 14A 38W DPAK
IRG4RC10STRRPBF IGBT 600V 14A 38W DPAK
IRG4RC10STRPBF New and Original
IRG4RC10STRPBF. New and Original
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