![]() | ![]() | ||
| PartNumber | IRGI4085-111PBF | IRGI4085 | IRGI4085PBF |
| Description | IGBT Transistors | ||
| Manufacturer | Infineon | IR | IR |
| Product Category | IGBT Transistors | IGBTs - Single | IC Chips |
| Technology | Si | - | - |
| Package / Case | TO-220-3 | - | - |
| Mounting Style | Through Hole | - | - |
| Collector Emitter Voltage VCEO Max | 330 V | - | - |
| Collector Emitter Saturation Voltage | 1.5 V | - | - |
| Maximum Gate Emitter Voltage | 30 V | - | - |
| Continuous Collector Current at 25 C | 28 A | - | - |
| Pd Power Dissipation | 38 W | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Brand | Infineon / IR | - | - |
| Gate Emitter Leakage Current | +/- 100 nA | - | - |
| Product Type | IGBT Transistors | - | - |
| Subcategory | IGBTs | - | - |
| Unit Weight | 0.211644 oz | - | - |