| PartNumber | IRGP35B60PDPBF | IRGP35B60PD-EP |
| Description | IGBT Transistors 600V Warp2 150kHz | IGBT Transistors 600V WARP2 150KHZ COPACK IGBT |
| Manufacturer | Infineon | Infineon |
| Product Category | IGBT Transistors | IGBT Transistors |
| RoHS | Y | Y |
| Technology | Si | Si |
| Package / Case | TO-247-3 | TO-247AD-3 |
| Mounting Style | Through Hole | Through Hole |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 1.85 V | 1.85 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V |
| Continuous Collector Current at 25 C | 60 A | 60 A |
| Pd Power Dissipation | 308 W | 308 W |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | - |
| Packaging | Tube | Tube |
| Continuous Collector Current Ic Max | 60 A | - |
| Height | 20.7 mm | 20.7 mm |
| Length | 15.87 mm | 15.87 mm |
| Width | 5.31 mm | 5.31 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Gate Emitter Leakage Current | 100 nA | - |
| Product Type | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 400 | 400 |
| Subcategory | IGBTs | IGBTs |
| Part # Aliases | SP001546216 | SP001533980 |
| Unit Weight | 1.340411 oz | 0.229281 oz |