IRGP35B60PDP

IRGP35B60PDPBF vs IRGP35B60PDPBF,GP35B60PD vs IRGP35B60PDPBF,IRGP35B60

 
PartNumberIRGP35B60PDPBFIRGP35B60PDPBF,GP35B60PDIRGP35B60PDPBF,IRGP35B60
DescriptionIGBT Transistors 600V Warp2 150kHz
ManufacturerInfineon--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.85 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C60 A--
Pd Power Dissipation308 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube--
Continuous Collector Current Ic Max60 A--
Height20.7 mm--
Length15.87 mm--
Width5.31 mm--
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity400--
SubcategoryIGBTs--
Part # AliasesSP001546216--
Unit Weight1.340411 oz--
Manufacturer Part # Description RFQ
Infineon Technologies
Infineon Technologies
IRGP35B60PDPBF IGBT Transistors 600V Warp2 150kHz
IRGP35B60PDPBF IGBT Transistors 600V Warp2 150kHz
IRGP35B60PDPBF,GP35B60PD New and Original
IRGP35B60PDPBF,IRGP35B60 New and Original
IRGP35B60PDPBF. New and Original
IRGP35B60PDPBFINFINEON-C New and Original
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